Resonant spectrum method for characterizing Ba < inf > 0.5 < /inf > Sr < inf > 0.5 < /inf > TiO < inf > 3 < /inf > based high overtone bulk acoustic wave resonators

Abstract

This letter reports the use of the resonant spectrum method to characterize a high overtone bulk acoustic wave resonator (HBAR) which has a thin film ferroelectric BaSrTiO3 (BSTO) active layer on a YAG substrate. The HBAR works on the principle of electric field induced piezoelectricity of the thin film ferroelectric BSTO and exhibits switching functionality. From the parallel and series resonant frequencies of each of the multiple peaks in the frequency spectrum of the HBAR, the distribution of spacing of parallel resonance frequency and the distribution of effective coupling coefficient are studied and parameters like acoustic wave velocity, electromechanical coupling coefficient, elastic constant, and density for the thin film are determined. The influence of dc bias voltages on the distribution of the effective coupling coefficient and the electromechanical coupling coefficient is also reported. This letter also establishes the relationship between the relative tunability of the device capacitance and the electromechanical coupling coefficient.