Ground state properties of an exciton in a GaAs quantum dot in the presence of an external magnetic field using 1/ N expansion method

dc.contributor.author Luhluh Jahan, K.
dc.contributor.author Chatterjee, Ashok
dc.date.accessioned 2022-03-27T11:44:52Z
dc.date.available 2022-03-27T11:44:52Z
dc.date.issued 2018-04-10
dc.description.abstract The problem of an exciton trapped in a three dimensional Gaussian quantum dot is studied in the presence of an external magnetic field. 1/N expansion method and shifted 1/N expansion method are employed to obtain the ground state energy of the exciton as a function of the quantum dot size, the confinement strength and the magnetic field. We have also studied the excited states of the exciton in the quantum dot. We could see the probability of quantum dot lasers by tuning the quantum dot parameters.
dc.identifier.citation AIP Conference Proceedings. v.1942
dc.identifier.issn 0094243X
dc.identifier.uri 10.1063/1.5028636
dc.identifier.uri http://aip.scitation.org/doi/abs/10.1063/1.5028636
dc.identifier.uri https://dspace.uohyd.ac.in/handle/1/14631
dc.title Ground state properties of an exciton in a GaAs quantum dot in the presence of an external magnetic field using 1/ N expansion method
dc.type Conference Proceeding. Conference Paper
dspace.entity.type
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