A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET

dc.contributor.author Priya, Anjali
dc.contributor.author Mishra, Ram Awadh
dc.date.accessioned 2022-03-27T06:41:46Z
dc.date.available 2022-03-27T06:41:46Z
dc.date.issued 2016-04-01
dc.description.abstract In this paper, analytical modeling of surface potential is proposed for new Triple Metal Gate (TMG) fully depleted Recessed-Source/Dain Silicon On Insulator (SOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The metal with the highest work function is arranged near the source region and the lowest one near the drain. Since Recessed-Source/Drain SOI MOSFET has higher drain current as compared to conventional SOI MOSFET due to large source and drain region. The surface potential model developed by 2D Poisson's equation is verified by comparison to the simulation result of 2-dimensional ATLAS simulator. The model is compared with DMG and SMG devices and analysed for different device parameters. The ratio of metal gate length is varied to optimize the result.
dc.identifier.citation Superlattices and Microstructures. v.92
dc.identifier.issn 07496036
dc.identifier.uri 10.1016/j.spmi.2016.01.041
dc.identifier.uri https://www.sciencedirect.com/science/article/abs/pii/S0749603616300416
dc.identifier.uri https://dspace.uohyd.ac.in/handle/1/9758
dc.subject ATLAS 2-D device simulator
dc.subject Recessed Source/Drain MOSFET
dc.subject Short channel effect
dc.subject Silicon On Insulator (SOI) MOSFET
dc.subject Surface potential
dc.subject Triple Metal Gate (TMG) MOSFET
dc.title A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET
dc.type Journal. Article
dspace.entity.type
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