Near-infrared photoactive Cu < inf > 2 < /inf > ZnSnS < inf > 4 < /inf > thin films by co-sputtering

dc.contributor.author Banavoth, Murali
dc.contributor.author Dias, Sandra
dc.contributor.author Krupanidhi, S. B.
dc.date.accessioned 2022-03-27T08:37:28Z
dc.date.available 2022-03-27T08:37:28Z
dc.date.issued 2013-08-01
dc.description.abstract The thin films of Cu2ZnSnS4 (CZTS) were grown by co-sputtering further the structural, optical and electrical properties were analyzed and confirmed the CZTS phase formation. The photo response of CZTS in near IR photodectection has been demonstrated. The detector response was measured employing both the IR lamp and IR laser illuminations. The calculated growth and decay constants were 130 m sec and 700 m sec followed by the slower components upon lamp illumination. The external quantum efficiency of 15%, responsivity of 13 AW-1 makes CZTS a suitable candidate for the IR photodectection. © 2013 © 2013 Author(s).
dc.identifier.citation AIP Advances. v.3(8)
dc.identifier.uri 10.1063/1.4820377
dc.identifier.uri http://aip.scitation.org/doi/10.1063/1.4820377
dc.identifier.uri https://dspace.uohyd.ac.in/handle/1/11255
dc.title Near-infrared photoactive Cu < inf > 2 < /inf > ZnSnS < inf > 4 < /inf > thin films by co-sputtering
dc.type Journal. Article
dspace.entity.type
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