Growth of preferred oriented Ba < inf > 0.5 < /inf > Sr < inf > 0.5 < /inf > TiO < inf > 3 < /inf > films on amorphous substrates by RF sputtering

Abstract

We have deposited Ba0.5Sr0.5TiO3 film by RF magnetron sputtering by varying the working pressure and Ar/O2 ratio. We have grown these BST5 films on amorphous fused silica substrates, and we have achieved (2 0 0) oriented grown films. This is important as oriented film gives enhanced properties for these compositions and growth on fused silica makes the process compatible with silicon technology. From XRD it is clear that the films were grown in (2 0 0) direction, and from the transmission spectra we have calculated the optical constants of the film. The experimental results show that the band gap of preferred oriented films is different from the band gap of amorphous and crystalline BST films. © 2012 American Institute of Physics.