Electrical properties of pulsed laser deposited Bi < inf > 2 < /inf > Zn < inf > 2/3 < /inf > Nb < inf > 4/3 < /inf > O < inf > 7 < /inf > thin films for high K gate dielectric application

Abstract

Metal Insulator Semiconductor (MIS) capacitors with monoclinic bismuth zinc niobate pyrocholre having the composition Bi2Zn2 /3Nb 4/3O 7 (m-BZN) dielectric layer were fabricated and characterized. Capacitance voltage (C-V) and current voltage measurements were utilized to obtain the dielectric properties, leakage current density and interface quality. The results shows that the obtained m-BZN thin films presents a high dielectric constant in between 30 and 70, a good interface quality with silicon and a leakage current density of 10 μA/cm 2 for a field strength of 100 kV/cm which is acceptable for high performance logic circuits. The equilent oxide thickness for the films annealed at 200 °C was 10 nm. These results suggest that m-BZN thin films can be potentially integrated as gate dielectric materials in CMOS technology. © 2010 Springer Science+Business Media, LLC.