Impact of Doping Concentration on the performance of TMG Re-S/D FDSOI MOSFET

Abstract

This paper presents the impact of doping concentration on the performance of Triple Metal Gate (TMG) Recessed-Source/Drain (Re-S/D) Fully-depleted Silicon-on-Insulator (FDSOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). As, the problem of high series resistance in Ultra thin body (UTB) FDSOI is overcome by Re-SID MOSFET in which the depth of source/drain is extended into Buried Oxide (BOX) layer. It is, therefore, necessary to further optimize the device performance at different doping levels. Here, the effect of variation in channel and substrate doping concentration has been investigated for the first time in the design of TMG Re-S/D FDSOI MOSFET. The performance parameters like threshold voltage, Ion/Ioff, transconductance, Drain Induced Barrier Lowering (DIBL), and subthreshold slope have been taken under study. The device has been designed and simulated using device simulation software-Silvaco ATLAS TCAD tool. The random dopant fluctuation (RDF) is found to be reduced by optimizing the doping of substrate region.