Microwave characterization techniques for high K thin films

dc.contributor.author Sudheendran, K.
dc.contributor.author James Raju, K. C.
dc.date.accessioned 2022-03-27T11:44:40Z
dc.date.available 2022-03-27T11:44:40Z
dc.date.issued 2010-01-01
dc.description.abstract Characterization of the dielectric properties of bulk materials in the microwave frequency range is well developed while that of thin films is a challenge. New microwave characterization techniques are needed for thin films taking in to account the fact that they are always deposited on a dielectric or conducting substrate and the thickness of the film is too small compared to the wavelength involved. In this paper we are demonstrating various techniques that can be used for the microwave characterization of thin films. The microwave dielectric properties of the bismuth zinc niobate (BZN) thin films were characterized at different frequencies using a few techniques by involving coplanar waveguide (CPW) transmission lines circular patch capacitors and split post dielectric resonators. The first two are broadband measurement techniques while the third one is a spot frequency technique. © (2010) Trans Tech Publications.
dc.identifier.citation Key Engineering Materials. v.421-422
dc.identifier.issn 10139826
dc.identifier.uri 10.4028/www.scientific.net/KEM.421-422.73
dc.identifier.uri https://www.scientific.net/KEM.421-422.73
dc.identifier.uri https://dspace.uohyd.ac.in/handle/1/14623
dc.subject Dielectric permittivity
dc.subject High K
dc.subject Microwave
dc.subject Thin films
dc.title Microwave characterization techniques for high K thin films
dc.type Book Series. Conference Paper
dspace.entity.type
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