Microwave dielectric properties of Ba(Zn < inf > 1/3 < /inf > Ta < inf > 2/3 < /inf > )O < inf > 3 < /inf > for application in high power waveguide window

Abstract

Higher dielectric constant, low dielectric loss and good transmission characteristicshave been the goal for developing the ceramic waveguide window for high power windowapplications. The choice of materials having high k with low dielectric lossand reduced window size is key parameters to achieve maximum microwave transmissionwithout unleashing microwave dissipation. The microwave dielectric properties ofsynthesized Ba(Zn1/3Ta2 /3)O3 (BZT) ceramics have been studied for high power windowapplications. The structural studies are correlated with microwave dielectric propertiesof BZT. The maximum values of dielectric constant ϵr =30, Q ×f0 = 102 THz and near zero temperaturecoefficient of resonance frequency were obtained for BZT ceramics sintered at thetemperature of 1550 °Cfor 4 h. The measured results are used to design a tapered transition from air filledwaveguide to narrow (reduced width and height) dielectric filled waveguide using Heckenslinear taper at a specific frequency. The simulation result shows that the lowerreflection loss is obtained for the tapered transition of the narrow BZT window ascompared to the standard waveguide BZT window. The return loss of –34 dB is obtained forS-bandwaveguide window with a bandwidth of 675 MHz. The return loss observed in the narrow BZTwindow is –46 dB with a bandwidth of 570 MHz at a center frequency of 3.63 GHz. Most ofthe disadvantages in conventional windows will be rectified using the design of the tapertransion employing narrow waveguide window in high power applications.