Ion beam characterization and engineering of strain in semiconductor multi-layers

Abstract

The objective of this work is to measure and engineer the strain in III-V compound semiconductor multi-layers using ion beams, which leads to spatial band-gap tuning for the integration of optoelectronics devices. Strained layer superlattices have been of unique interest due to their ability to tune the band gap, which depends on the strain at the interface. Therefore the strain measurements at the interface are of great interest. A large area two-dimensional positions sensitive ΔE-E detector telescope and a fully automated high energy channeling facility have been developed at NSC, New Delhi. An overview of the series of ERDA, RBS, Channeling, HRXRD and ion beam mixing experiments performed in this direction will be discussed in this paper. © 2003 Elsevier B.V. All rights reserved.