Energy spectrum of D < sup > 0 < /sup > centre in a spherical Gaussian quantum dot

dc.contributor.author Boda, Aalu
dc.contributor.author Chatterjee, Ashok
dc.date.accessioned 2022-03-27T11:52:32Z
dc.date.available 2022-03-27T11:52:32Z
dc.date.issued 2015-05-15
dc.description.abstract The properties of a neutral hydrogenic donor (D0) centres have been studied for a GaAs semiconductor quantum dot with the Gaussian confinement potential. The energy levels of the ground state (n = 1) and the excited states of both the first excited (n = 2) and second excited (n = 3) configurations have been calculated by variational method. It has been shown that the excited states of the (D0) centre in quantum dot are bound for sufficiently strong confinement potential. The conditions of binding for the ground state as well as excited states have been determined as functions of the potential strength and quantum dot radius. The ground state electron energy is compared with those available in the literature.
dc.identifier.citation AIP Conference Proceedings. v.1661
dc.identifier.issn 0094243X
dc.identifier.uri 10.1063/1.4915361
dc.identifier.uri http://aip.scitation.org/doi/abs/10.1063/1.4915361
dc.identifier.uri https://dspace.uohyd.ac.in/handle/1/14908
dc.title Energy spectrum of D < sup > 0 < /sup > centre in a spherical Gaussian quantum dot
dc.type Conference Proceeding. Conference Paper
dspace.entity.type
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