Large anomalous Hall conductivity and Hall coefficient of Co < inf > 2 < /inf > FeSi thin films

dc.contributor.author	Hazra, Binoy Krishna
dc.contributor.author	Raja, M. Manivel
dc.contributor.author	Rawat, R.
dc.contributor.author	Lakhani, Archana
dc.contributor.author	Srinath, S.
dc.date.accessioned	2022-03-27T11:30:39Z
dc.date.available	2022-03-27T11:30:39Z
dc.date.issued	2017-05-19
dc.description.abstract	Temperature dependent resistivity ρ(T) and Hall measurements are carried out on 50 nm Co2FeSi thin film deposited at 450°C prepared by magnetron dc sputtering technique. ρ(T) of this film has been analyzed by taking electron-magnon, electron-phonon and electron-electron scattering processes. Large anomalous Hall conductivity and large anomalous Hall coefficient values than those of single crystal are observed. This large value of Hall conductivity suggest that skew scattering is dominant over intrinsic berry phase contribution.
dc.identifier.citation	AIP Conference Proceedings. v.1832
dc.identifier.issn	0094243X
dc.identifier.uri	10.1063/1.4980776
dc.identifier.uri	http://aip.scitation.org/doi/abs/10.1063/1.4980776
dc.identifier.uri	https://dspace.uohyd.ac.in/handle/1/13648
dc.subject	Anomalous Hall coefficient
dc.subject	Anomalous Hall conductivity
dc.subject	Heusler alloy
dc.title	Large anomalous Hall conductivity and Hall coefficient of Co < inf > 2 < /inf > FeSi thin films
dc.type	Conference Proceeding. Conference Paper
dspace.entity.type

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