Facet dependent reactivity and selective deposition of nanometer sized Β-SiC on diamond surfaces
Facet dependent reactivity and selective deposition of nanometer sized Β-SiC on diamond surfaces
| dc.contributor.author | Jiang, X. | |
| dc.contributor.author | Srikanth, V. V.S.S. | |
| dc.contributor.author | Zhao, Y. L. | |
| dc.contributor.author | Zhang, R. Q. | |
| dc.date.accessioned | 2022-03-27T04:03:52Z | |
| dc.date.available | 2022-03-27T04:03:52Z | |
| dc.date.issued | 2008-07-01 | |
| dc.description.abstract | Selective deposition of nano- Β-SiC on non-{100} diamond faces has been observed in a microwave plasma chemical vapor deposition process due to the presence of Si (C H3)4 in the gas phase. The process allows only the growth of diamond starting crystals whose [001] is normal to the film surface and interrupts the growth of otherwise oriented grains; this is due to the preferential deposition of Si H3 on {111} diamond but not on {001} diamond according to additional theoretical reactivity analysis of the gas species on the exposed diamond surfaces. The facet dependent reactivity facilitates control of diamond/ Β-SiC nanocomposite film growth. © 2008 American Institute of Physics. | |
| dc.identifier.citation | Applied Physics Letters. v.92(24) | |
| dc.identifier.issn | 00036951 | |
| dc.identifier.uri | 10.1063/1.2944143 | |
| dc.identifier.uri | http://aip.scitation.org/doi/10.1063/1.2944143 | |
| dc.identifier.uri | https://dspace.uohyd.ac.in/handle/1/6125 | |
| dc.title | Facet dependent reactivity and selective deposition of nanometer sized Β-SiC on diamond surfaces | |
| dc.type | Journal. Article | |
| dspace.entity.type |
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