Effect of process parameters and post-deposition annealing on the microwave dielectric and optical properties of pulsed laser deposited Bi < inf > 1.5 < /inf > Zn < inf > 1.0 < /inf > Nb < inf > 1.5 < /inf > O < inf > 7 < /inf > thin films

Abstract

Bismuth Zinc niobate (Bi1.5Zn1.0Nb 1.5O7) thin films were deposited by pulsed laser deposition (PLD) method on fused silica substrates at different oxygen pressures. The structural, microwave dielectric and optical properties of these thin films were systematically studied for both the as-deposited and the annealed films at 600°C. The as-deposited films were all amorphous in nature but crystallized on annealing at 600°C in air. The surface morphology as studied by atomic force microscopy (AFM) reveals ultra-fine grains in the case of as-deposited thin films and cluster grain morphology on annealing. The as-deposited films exhibit refractive index in the range of 2.36-2.53 (at a wavelength of 750 nm) with an optical absorption edge value of 3.30-3.52 eV and a maximum dielectric constant of 11 at 12.15 GHz. On annealing the films at 600°C they crystallize to the cubic pyrochlore structure accompanied by an increase in band gap, refractive index and microwave dielectric constant. © 2008 Springer-Verlag.