Bi2 (Zn < inf > 2/3-x/3 < /inf > Nb < inf > 4/3-2x/3 < /inf > Ti < inf > x < /inf > )O < inf > 7 < /inf >  ceramics - A high permittivity microwave dielectrics for electronics application

dc.contributor.author	Jacob, Mohan V.
dc.contributor.author	Sudheendran, K.
dc.contributor.author	Raju, K. C.James
dc.contributor.author	Mazierska, Janina
dc.date.accessioned	2022-03-27T11:44:59Z
dc.date.available	2022-03-27T11:44:59Z
dc.date.issued	2008-12-01
dc.description.abstract	High-K materials are needed for many microwave applications. In this paper microwave properties of Bi2Zn2/3-x/3Nb 4/3-2x/3TixO7 ceramics with x of 0, 0.2 and 0.4 are presented. Ceramics samples were prepared by solid state reaction from respective high purity oxide powders. Dielectric microwave properties of synthesised materials were measured at 3GHz in a wide range of temperatures using Dielectric Post (DP) resonator technique. The high dielectric permittivity together with low sintering temperature make M-BNZ an attractive candidate for Low Temperature Co-fired Ceramics for charge storage applications in various electronics circuits and microwave systems. ©2008 IEEE.
dc.identifier.citation	Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008
dc.identifier.uri	10.1109/APMC.2008.4958693
dc.identifier.uri	http://ieeexplore.ieee.org/document/4958693/
dc.identifier.uri	https://dspace.uohyd.ac.in/handle/1/14635
dc.title	Bi2 (Zn < inf > 2/3-x/3 < /inf > Nb < inf > 4/3-2x/3 < /inf > Ti < inf > x < /inf > )O < inf > 7 < /inf > ceramics - A high permittivity microwave dielectrics for electronics application
dc.type	Conference Proceeding. Conference Paper
dspace.entity.type

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