Comparative analysis of junctionless Bulk and SOI/SON FinFET
Comparative analysis of junctionless Bulk and SOI/SON FinFET
| dc.contributor.author | Priya, Anjali | |
| dc.contributor.author | Rai, Sanjeev | |
| dc.contributor.author | Mishra, Ram Awadh | |
| dc.date.accessioned | 2022-03-27T06:41:46Z | |
| dc.date.available | 2022-03-27T06:41:46Z | |
| dc.date.issued | 2017-11-21 | |
| dc.description.abstract | The characteristics of junctionless(JL) SON(Silicon on Nothing) FinFET, JL Bulk FinFET and SOI(Silicon on Insulator) JNT(Junctionless nanowire transistor) transistors were compared. A Silicon on nothing transistor have substrate with air filled dielectric. JL SON FinFET have better on/off current ratio and short channel effect (SCE) by reducing channel thickness due to substrate channel junction. The subthreshold slope is 63.2mV/dec and DIBL 82.68mV. the on/off current ratio is approximately 105 at channel thickness of 10nm. The variation in threshold voltage as Nsub varies from 1017 to 1018 cm-3 is about 33%. JL SON FinFET gives better on/off current ratio with the variation of work function. | |
| dc.identifier.citation | 2017 4th International Conference on Power, Control and Embedded Systems, ICPCES 2017. v.2017-January | |
| dc.identifier.uri | 10.1109/ICPCES.2017.8117647 | |
| dc.identifier.uri | http://ieeexplore.ieee.org/document/8117647/ | |
| dc.identifier.uri | https://dspace.uohyd.ac.in/handle/1/9757 | |
| dc.subject | Atlas 3D Simulation | |
| dc.subject | Fin Shaped Field Effect Transistor(FinFET) | |
| dc.subject | Junctionless(JL) | |
| dc.subject | Silicon On Insulator(SOI) | |
| dc.subject | Silicon on Nothing(SON) | |
| dc.title | Comparative analysis of junctionless Bulk and SOI/SON FinFET | |
| dc.type | Conference Proceeding. Conference Paper | |
| dspace.entity.type |
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