Low temperature synthesis of thin films of carbon nitride
Low temperature synthesis of thin films of carbon nitride
| dc.contributor.author | Krishna, M. Ghanashyam | |
| dc.contributor.author | Gunasekhar, K. R. | |
| dc.contributor.author | Mohan, S. | |
| dc.date.accessioned | 2022-03-27T06:40:49Z | |
| dc.date.available | 2022-03-27T06:40:49Z | |
| dc.date.issued | 1995-01-01 | |
| dc.description.abstract | Thin films of carbon nitride have been prepared using triode ion plating. It has been observed that the compound formation occurs at ambient substrate temperature itself. Though the films are completely amorphous at temperatures below 900 °C, they are hard and transparent down to a wavelength of 200 nm. It has also been observed that the film transmission can be modulated using nitrogen ion flux and partial pressure. The IR transmission spectra clearly show the C-N stretch band around 2200 cm-1. Onset of crystallization, as evidenced from electron diffraction, occurs around 900 °C substrate temperature. © 1995, Materials Research Society. All rights reserved. | |
| dc.identifier.citation | Journal of Materials Research. v.10(5) | |
| dc.identifier.issn | 08842914 | |
| dc.identifier.uri | 10.1557/JMR.1995.1083 | |
| dc.identifier.uri | http://link.springer.com/10.1557/JMR.1995.1083 | |
| dc.identifier.uri | https://dspace.uohyd.ac.in/handle/1/9637 | |
| dc.title | Low temperature synthesis of thin films of carbon nitride | |
| dc.type | Journal. Article | |
| dspace.entity.type |
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