Femtosecond ablation of silicon in acetone: Tunable photoluminescence from generated nanoparticles and fabrication of surface nanostructures

Abstract

Silicon (Si) nanoparticles (NPs) and self-organized high spatial frequency laser (HSFL) induced periodic surface structures were fabricated by means of femtosecond ablation of bulk Si target in acetone. The ablation was performed with ∼40 fs (fwhm) pulses and different input energies of ∼500, ∼200, ∼150, ∼100, ∼50, and ∼10 μJ. Fabricated NPs and nanostructures (NSs) were characterized by UV-visible absorption spectroscopy, photoluminescence (PL) spectroscopy, Raman spectroscopy, transmission electron microscopy, and field emission scanning electron microscopy. The average sizes of the NPs were estimated to be in the 4-135 nm range. From the PL studies of Si NPs of different sizes, we have observed a size-dependent shift toward blue spectral region. We could tune the observed PL peak in the spectral range of 440-515 nm. The crystalline and amorphous nature of the Si nanoparticles and nanostructures was investigated using selected area electron diffraction and Raman spectra. Complex refractive index, conduction band electron density of the Si NPs, estimated by measuring the effective spot size corresponding to each input energies, were observed to play a crucial role in determining the periodicity of HSFL induced periodic surface structures. Experimentally measured periodicity of gratings was in good agreement with the theory. © 2014 American Chemical Society.