Effect of Sr substitution on tunability and dielectric properties in Pb(Zr < inf > 0.50 < /inf > Ti < inf > 0.50 < /inf > )O < inf > 3 < /inf > thin films fabricated by chemical solution deposition

Abstract

(Pb1-xSrx)(Zr0.5Ti0.5)O 3 ( x= 0 to 0.65) thin films were grown on Pt/TiO2/ SiO2/Si substrates by chemical solution deposition. Films were crystallized in the single phase perovskite structure in the temperature range (550-700°C). Dielectric constant and loss tangent at room temperature reduced as the percentage of Sr substitution increased at the A-site of this perovskite structure. The phase transition temperature (Tc) lowered with Sr-substitution and Tc below the room temperature was obtained for composition with Sr ≥ 40%. The room temperature tunability reduced with Sr substitution, however, the k-factor slightly improved.