Ion beam modification of GaN based semiconductor heterostructures
Ion beam modification of GaN based semiconductor heterostructures
| dc.contributor.advisor | Pathak, A.P. | |
| dc.contributor.author | Sathish, N. | |
| dc.date.accessioned | 2017-04-06T05:59:30Z | |
| dc.date.accessioned | 2022-03-03T04:52:29Z | |
| dc.date.available | 2017-04-06T05:59:30Z | |
| dc.date.available | 2022-03-03T04:52:29Z | |
| dc.date.issued | 2009-06-21 | |
| dc.identifier.uri | https://dspace.uohyd.ac.in/handle/1/867 | |
| dc.language.iso | en | en_US |
| dc.publisher | University of Hyderabad | en_US |
| dc.relation.ispartofseries | TH5450; | |
| dc.subject | Physics | en_US |
| dc.title | Ion beam modification of GaN based semiconductor heterostructures | en_US |
| dc.type | Thesis | en_US |
| dspace.entity.type |