Switchable high overtone resonances in BST film with MIM structure on sapphire substrate

dc.contributor.author	Sandeep, K.
dc.contributor.author	Goud, J. Pundareekam
dc.contributor.author	Raju, K. C.James
dc.date.accessioned	2022-03-27T11:41:58Z
dc.date.available	2022-03-27T11:41:58Z
dc.date.issued	2016-09-27
dc.description.abstract	DC bias field dependent high overtone resonances are observed in a metal insulator metal (MIM) structure based on Ba0.5Sr0.5TiO3 (BST) thin films on a sapphire substrate. The microwave measurement shows the bias dependent nature of the device, wherein without any bias it acts like a MIM capacitor but upon biasing resonant peaks start appearing in its frequency spectra, which is typical of a response given by a high overtone bulk acoustic wave resonator (HBAR). Acoustic velocity of the sapphire substrate is calculated to be 11440 m/s and the HBAR exhibits a high quality factor of 4370 around 1.39 GHz.
dc.identifier.citation	2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016
dc.identifier.uri	10.1109/ISAF.2016.7578099
dc.identifier.uri	http://ieeexplore.ieee.org/document/7578099/
dc.identifier.uri	https://dspace.uohyd.ac.in/handle/1/14506
dc.subject	electrostrictive
dc.subject	high Q
dc.subject	switchable HBAR
dc.subject	thin film ferroelctric
dc.title	Switchable high overtone resonances in BST film with MIM structure on sapphire substrate
dc.type	Conference Proceeding. Conference Paper
dspace.entity.type

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