Electrical and optical properties of electron irradiated ZnO: Li thin films

dc.contributor.author Biradar, Balaji
dc.contributor.author Jali, V. M.
dc.contributor.author Murali, B.
dc.contributor.author Krupanidhi, S. B.
dc.contributor.author Sanjeev, Ganesh
dc.date.accessioned 2022-03-27T08:37:29Z
dc.date.available 2022-03-27T08:37:29Z
dc.date.issued 2013-07-08
dc.description.abstract The effects of 8 MeV electron irradiation (with variable fluence) on the electrical and optical properties of Lithium doped Zinc oxide thin films prepared by sol-gel synthesis are reported. There is a decrease in crystallinity and crystallite size with increase in fluence, as confirmed by XRD and SEM. We observe a decrease in transmittance, band gap and refractive index, while there is an increase in the extension coefficient with the fluence. I-V measurements have shown a decrease in leakage current and interestingly, the metal-semiconductor-metal (M-S-M) device shows only the ohmic behavior after irradiation. © (2013) Trans Tech Publications, Switzerland.
dc.identifier.citation Advanced Materials Research. v.699
dc.identifier.issn 10226680
dc.identifier.uri 10.4028/www.scientific.net/AMR.699.257
dc.identifier.uri https://www.scientific.net/AMR.699.257
dc.identifier.uri https://dspace.uohyd.ac.in/handle/1/11257
dc.subject Electrical
dc.subject Electron irradiation
dc.subject Optical
dc.subject Sol-gel
dc.subject ZnO: Li thin films
dc.title Electrical and optical properties of electron irradiated ZnO: Li thin films
dc.type Book Series. Conference Paper
dspace.entity.type
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