Studies of electronic sputtering of fullerene under swift heavy ion impact
Studies of electronic sputtering of fullerene under swift heavy ion impact
| dc.contributor.author | Ghosh, S. | |
| dc.contributor.author | Avasthi, D. K. | |
| dc.contributor.author | Tripathi, A. | |
| dc.contributor.author | Srivastava, S. K. | |
| dc.contributor.author | Nageswara Rao, S. V.S. | |
| dc.contributor.author | Som, T. | |
| dc.contributor.author | Mittal, V. K. | |
| dc.contributor.author | Grüner, F. | |
| dc.contributor.author | Assmann, W. | |
| dc.date.accessioned | 2022-03-27T06:42:55Z | |
| dc.date.available | 2022-03-27T06:42:55Z | |
| dc.date.issued | 2002-05-01 | |
| dc.description.abstract | The present work reports the dependence of electronic sputtering on thickness of fullerene film. The energetic ions of 200 MeV Au15+ are taken from NSC Pelletron at New Delhi and the Tandem accelerator at Munich. On-line elastic recoil detection analysis (ERDA) with ΔE-E telescope detector is used to determine the electronic sputtering yield. We observed systematic decrease in sputtering yield of carbon with increase in film (C60/silicon) thickness. © 2002 Elsevier Science B.V. All rights reserved. | |
| dc.identifier.citation | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. v.190(1-4) | |
| dc.identifier.issn | 0168583X | |
| dc.identifier.uri | 10.1016/S0168-583X(02)00474-3 | |
| dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S0168583X02004743 | |
| dc.identifier.uri | https://dspace.uohyd.ac.in/handle/1/9879 | |
| dc.subject | Elastic recoil detection analysis | |
| dc.subject | Electron-phonon coupling | |
| dc.subject | Electronic sputtering | |
| dc.subject | Fullerene | |
| dc.subject | Swift heavy ion | |
| dc.title | Studies of electronic sputtering of fullerene under swift heavy ion impact | |
| dc.type | Journal. Conference Paper | |
| dspace.entity.type |
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