Nanocrystalline Sb-doped-BaSnO < inf > 3 < /inf > perovskite electron transport layer for dye-sensitized solar cells
Nanocrystalline Sb-doped-BaSnO < inf > 3 < /inf > perovskite electron transport layer for dye-sensitized solar cells
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Date
2022-03-15
Authors
Purushotham Reddy, Nandarapu
Santhosh, Rompivalasa
Fernandes, Jean Maria
Muniramaiah, Reddivari
Murali, Banavoth
Paul Joseph, D.
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Abstract
Undoped and Sb-doped BaSn(1-x)SbxO3 (x = 0, 0.01 and 0.03) perovskite nanoparticles are synthesized using a facile peroxide-precipitate method and annealed at 900 °C for 2 h in air. Rietveld refinement of X-ray diffraction data indicates single-phase cubic structure which also corroborates with transmission electron microscopy data. Reduction in reflectance intensity and optical bandgap is observed with Sb-doping. Dye-sensitized solar cell fabricated using nanocrystalline BaSn(1-x)SbxO3 at x = 0.01 as electron transport layer shows maximum power conversion efficiency of 4.06% and short-circuit current density of 9.97 mAcm−2, substantiating the electrochemical impedance data.
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Keywords
Diffuse reflectance,
Dye-sensitized solar cell,
Electron transport layer,
Nanoparticles,
Perovskite Sb-doped BaSnO 3,
Solar energy materials
Citation
Materials Letters. v.311