Ion beam studies in strained layer superlattices

Simple item page
dc.contributor.author Pathak, A. P.
dc.contributor.author Nageswara Rao, S. V.S.
dc.contributor.author Siddiqui, A. M.
dc.contributor.author Lakshmi, G. B.V.S.
dc.contributor.author Srivastava, S. K.
dc.contributor.author Ghosh, S.
dc.contributor.author Bhattacharya, D.
dc.contributor.author Avasthi, D. K.
dc.contributor.author Goswami, D. K.
dc.contributor.author Satyam, P.
dc.contributor.author Dev, B. N.
dc.contributor.author Turos, A.
dc.date.accessioned 2022-03-27T06:42:57Z
dc.date.available 2022-03-27T06:42:57Z
dc.date.issued 2002-01-01
dc.description.abstract The potential device application of semiconductor heterostructures and strained layer superlattices has been highlighted. Metal organic chemical vapour deposition grown In0.53Ga0.47As/InP lattice-matched structure has been irradiated by 130 MeV Ag13+ and studied by RBS/Channelling using 3.5 MeV He2+ ions. Ion irradiation seems to have induced a finite tensile strain in the InGaAs layer, indicating thereby that ion beam mixing occurs at this energy. Other complementary techniques like high resolution XRD and STM are needed to conclude the structural modifications in the sample. © 2002 Elsevier Science B.V. All rights reserved.
dc.identifier.citation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. v.193(1-4)
dc.identifier.issn 0168583X
dc.identifier.uri 10.1016/S0168-583X(02)00798-X
dc.identifier.uri https://www.sciencedirect.com/science/article/abs/pii/S0168583X0200798X
dc.identifier.uri https://dspace.uohyd.ac.in/handle/1/9881
dc.subject Ion beam mixing
dc.subject RBS/channeling
dc.subject SLS
dc.title Ion beam studies in strained layer superlattices
dc.type Journal. Article
dspace.entity.type
Files
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Plain Text
Description:
Download
Collections
Electronics Science and Technology - Publications