Spin persistent current of one electron quantum dot with Gaussian confinement

Abstract

We have investigated the ground state persistent current of one-electron semiconductor quantum dot with a Gaussian confinement in the presence of an external magnetic field. The spin persistent current has been calculated by using a method of numerical diagonalization of the Hamiltonian matrix within the effective-mass approximation. It is shown that the persistent current almost increases with increasing the magnetic field for a particular value of the temperature. It is also shown that as a function of the quantum dot size, the diamagnetic current exhibits a maximum at a certain confinement length. It is furthermore shown that for a shallow potential, the persistent current shows an interesting maximum structure as a function of the depth of the potential.