Optical and electronic properties of Ti < inf > 1-x < /inf > Nb < inf > x < /inf > N thin films

dc.contributor.author	Vasu, K.
dc.contributor.author	Gopikrishnan, G. M.
dc.contributor.author	Krishna, M. Ghanashyam
dc.contributor.author	Padmanabhan, K. A.
dc.date.accessioned	2022-03-27T06:50:41Z
dc.date.available	2022-03-27T06:50:41Z
dc.date.issued	2012-12-01
dc.description.abstract	Ti1-xNbxN thin films with x=0, 0.26, 0.41, 0.58 and 1 were deposited on silicon (311) substrate by RF magnetron sputtering. The dielectric functions of these films were calculated by fitting measured reflectance spectra to the Drude-Lorentz model. The measured reflectance spectra exhibits a minimum in the visible region and this feature shifts to higher energy (shorter wavelength) with increase in x. The observed behavior can be modeled as the response of four Lorentz oscillators. The real part of the dielectric function is characterized by a screened plasma energy of 2.26 eV for x=0 which increased to 2.80 eV for x=0.58 in the Ti1-xNbxN film. © 2012 American Institute of Physics.
dc.identifier.citation	AIP Conference Proceedings. v.1447(1)
dc.identifier.issn	0094243X
dc.identifier.uri	10.1063/1.4710195
dc.identifier.uri	http://aip.scitation.org/doi/abs/10.1063/1.4710195
dc.identifier.uri	https://dspace.uohyd.ac.in/handle/1/10359
dc.subject	dielectric function
dc.subject	Drude-Lorentz model
dc.subject	reflectance
dc.subject	TiN thin films
dc.title	Optical and electronic properties of Ti < inf > 1-x < /inf > Nb < inf > x < /inf > N thin films
dc.type	Conference Proceeding. Conference Paper
dspace.entity.type

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