N < sup > + < /sup > ion beam irradiation as a strategy to enhance the electrical conductivity of polycrystalline diamond thin films

Abstract

100 keV 14 N + ion beam (at fluences of 10 16 and 10 17 ions/cm 2 ) irradiation was used to alter the sp 2 bonded carbon networks (as revealed by Raman scattering analysis) and incorporate N atoms into the surface and sub-surface regions (as revealed by Rutherford backscattering analysis) in the typical polycrystalline diamond films and as a consequence, the electrical conductivity of the diamond thin films was enhanced several orders in comparison to the as-deposited film. The enhancement in electrical conductivity was achieved with negligible morphological and structural changes in the diamond thin film. This work demonstrates an easy and effective way of altering the electrical conductivity of diamond thin films to a required sub-surface depth.