Channeling radiation from relativistic electrons - Study of stacking faults and dislocations

Abstract

The discrete nature of the energy associated with channeled particles and consequent emission of channeling radiation has opened new applications in accelerator and atomic physics. The spontaneous transitions among various energy levels in the transverse space lead to what is known as channeling radiation. One-dimensional hydrogen atom model for continuum planar potential due to single plane is used for the case of planar channeled electrons to estimate the corresponding bound states in the potential well. The effects of extended defects like stacking faults (SFs) and dislocations on transitions among the various levels are studied by calculating the transition probabilities at the faulted region, i.e. at the SF boundary for the case of SF and distorted region of the dislocation. The obstruction and distortion effects of these extended defects are incorporated suitably to obtain initial and final populations of the eigenstates. © 2002 Elsevier Science B.V. All rights reserved.