Effect of sm < inf > 2 < /inf > o < inf > 3 < /inf > /zno on the microstructure and microwave dielectric properties of (zr < inf > 0.8 < /inf > , sn < inf > 0.2 < /inf > )tio < inf > 4 < /inf > ceramics

Abstract

(Zr0.8, Sn0.2)TiO4 ceramics containing ZnO and Sm2O3 as sintering aids are prepared by the conventional solid-state reaction. The effects of sintering parameters such as sintering temperature, sintering time and increasing Sm2O3 concentration on structural and dielectric properties are investigated. A secondary phase is not observed for the levels of 0.5–1.5 wt% Sm2O3 additions. Crystallite size of the sintered ZST ceramics ranges between 20 and 55 nm. The dielectric constant (εr) and temperature coefficient of the resonance frequency (τf) are not significantly affected. The unloaded quality factors (Q) are effectively promoted by Sm2O3 additions. A εr value of 39.3 and Qxfo of 63,850 (at 11.94 GHz) have been obtained for 1 wt% ZnO added (Zr0.8, Sn0.2)TiO4 ceramics with 1 wt% Sm2O3. The increase in Qxfo is attributed to the increase in grain size. The effect of grain size on the microwave dielectric properties of ZST is discussed. © 2008 Taylor and Francis Group, LLC.