Nano-structures under quantum-Hall conditions

Abstract

It is suggested that 2D-electron-gas-systems, 500 nm wide and 100 μ m long, subjected to the conditions under which the quantum Hall-effect is observed, can behave like a 3osephson tunnel junction in that a phase-driven alternating current should exist between the two edge currents flowing parallel and anti-parallel to the longitudinal direction. Recent experimental results supporting this idea in low as well as in high frequency limits are discussed. The quenching of the Hall effect observed at low magnetic fields (around B=O) is shown to be the low frequency manifestation of this effect. Some newer experimental results at high values of B-in the quantum-Hall regime-show evidence of quantum interference arising out of the mixing of the edge currents by the high frequency phasedriven alternating currents.