Studies on ohmic contacts to GaAs-based MESFETs and pseudomorphic HEMTs

dc.contributor.advisor Muraleedharan, K
dc.contributor.advisor Pathak, Anand P
dc.contributor.author Saravanan, Sai G
dc.date.accessioned 2024-07-02T10:12:44Z
dc.date.available 2024-07-02T10:12:44Z
dc.date.issued 2007-06
dc.description.abstract This chapter presents an outli~e of the theory ~nd lzterature pertainmg to ohmic contacts to GaAs-based MESFETs and pseudomorphlc HEMTs, and influence of activation annealing on ohmic contacts The motivation and objectives of this thesIs are listed The chapter concludes with the thesis plan
dc.identifier.uri https://dspcae.uohyd.ac.in/handle/1/15320
dc.language.iso en_US
dc.publisher University of Hyderabad
dc.title Studies on ohmic contacts to GaAs-based MESFETs and pseudomorphic HEMTs
dc.type Thesis
dspace.entity.type
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