Role of oxygen mixing percentage on r.f sputtered and microwave annealed crystalline SrBi < inf > 4 < /inf > Ti < inf > 4 < /inf > O < inf > 15 < /inf > thin films
Role of oxygen mixing percentage on r.f sputtered and microwave annealed crystalline SrBi < inf > 4 < /inf > Ti < inf > 4 < /inf > O < inf > 15 < /inf > thin films
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Date
2014-01-01
Authors
Rambabu, A.
Reddy, E. Sivanagi
Raju, K. C.James
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Abstract
Microwave annealed SBTi (SrBi4Ti4O15) ferroelectric thin films are deposited on amorphous fused silica substrates by R.F magnetron sputtering system. The single phase formation and crystalline nature of the films are confirmed by XRD. The structural, morphological and optical properties are studied with variation in oxygen mixing percentage (OMP). AFM revealed that grain size of the films is 92-132 nm range and roughness is 4.1-9.2 nm. The optical band gap and refractive index are varies from 3-3.52eV and 2-2.16 respectively as OMP varies. © 2014 AIP Publishing LLC.
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Keywords
Amorphous substrates,
Crystalline films,
Optical properties,
Oxygen Mixing Percentage(OMP),
Rf sputtering
Citation
AIP Conference Proceedings. v.1591