Role of oxygen mixing percentage on r.f sputtered and microwave annealed crystalline SrBi < inf > 4 < /inf > Ti < inf > 4 < /inf > O < inf > 15 < /inf >  thin films

dc.contributor.author	Rambabu, A.
dc.contributor.author	Reddy, E. Sivanagi
dc.contributor.author	Raju, K. C.James
dc.date.accessioned	2022-03-27T11:43:15Z
dc.date.available	2022-03-27T11:43:15Z
dc.date.issued	2014-01-01
dc.description.abstract	Microwave annealed SBTi (SrBi4Ti4O15) ferroelectric thin films are deposited on amorphous fused silica substrates by R.F magnetron sputtering system. The single phase formation and crystalline nature of the films are confirmed by XRD. The structural, morphological and optical properties are studied with variation in oxygen mixing percentage (OMP). AFM revealed that grain size of the films is 92-132 nm range and roughness is 4.1-9.2 nm. The optical band gap and refractive index are varies from 3-3.52eV and 2-2.16 respectively as OMP varies. © 2014 AIP Publishing LLC.
dc.identifier.citation	AIP Conference Proceedings. v.1591
dc.identifier.issn	0094243X
dc.identifier.uri	10.1063/1.4872788
dc.identifier.uri	https://dspace.uohyd.ac.in/handle/1/14563
dc.subject	Amorphous substrates
dc.subject	Crystalline films
dc.subject	Optical properties
dc.subject	Oxygen Mixing Percentage(OMP)
dc.subject	Rf sputtering
dc.title	Role of oxygen mixing percentage on r.f sputtered and microwave annealed crystalline SrBi < inf > 4 < /inf > Ti < inf > 4 < /inf > O < inf > 15 < /inf > thin films
dc.type	Conference Proceeding. Conference Paper
dspace.entity.type

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