Conductive atomic force microscopy study of local electronic transport in ZnTe thin films

Abstract

ZnTe thin films obtained by the electron beam evaporation technique were subjected to thermal annealing at 500°C for 2 hours. The as deposited films were amorphous but transformed to the crystalline state under influence of the thermal treatment. There is increase in optical absorption due to the heat treatment caused by increase in free carrier concentration. Conductive atomic force microscopy shows the presence of electronic inhomogeneities in the films. This is attributed to local compositional variations in the films. I-V analysis in these systems indicates formation of Schottky junction at the metal semiconductor (M-S) interface. © 2013 American Institute of Physics.