Conductive atomic force microscopy study of local electronic transport in ZnTe thin films

dc.contributor.author	Kshirsagar, Sachin D.
dc.contributor.author	Krishna, M. Ghanashyam
dc.contributor.author	Tewari, Surya P.
dc.date.accessioned	2022-03-27T06:49:31Z
dc.date.available	2022-03-27T06:49:31Z
dc.date.issued	2013-03-15
dc.description.abstract	ZnTe thin films obtained by the electron beam evaporation technique were subjected to thermal annealing at 500°C for 2 hours. The as deposited films were amorphous but transformed to the crystalline state under influence of the thermal treatment. There is increase in optical absorption due to the heat treatment caused by increase in free carrier concentration. Conductive atomic force microscopy shows the presence of electronic inhomogeneities in the films. This is attributed to local compositional variations in the films. I-V analysis in these systems indicates formation of Schottky junction at the metal semiconductor (M-S) interface. © 2013 American Institute of Physics.
dc.identifier.citation	AIP Conference Proceedings. v.1512
dc.identifier.issn	0094243X
dc.identifier.uri	10.1063/1.4791201
dc.identifier.uri	http://aip.scitation.org/doi/abs/10.1063/1.4791201
dc.identifier.uri	https://dspace.uohyd.ac.in/handle/1/10304
dc.subject	conducting atomic force microscopy
dc.subject	metal/semiconductor interface
dc.subject	Schottky Barrier
dc.subject	ZnTe films
dc.title	Conductive atomic force microscopy study of local electronic transport in ZnTe thin films
dc.type	Conference Proceeding. Conference Paper
dspace.entity.type

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