Metal nanoparticles in dielectric media: Physical vapor deposited HfO < inf > 2 < /inf > & amp; Ag multilayers for MOS device and SPR applications

dc.contributor.author Mangababu, A.
dc.contributor.author Arun, N.
dc.contributor.author Vinod Kumar, K.
dc.contributor.author Pathak, A. P.
dc.contributor.author Nageswara Rao, S. V.S.
dc.date.accessioned 2022-03-27T06:42:21Z
dc.date.available 2022-03-27T06:42:21Z
dc.date.issued 2020-11-05
dc.description.abstract Multilayered films of Hafnium Oxide & Silver are grown using e-beam evaporation system and then they are annealed at different temperatures. UV-VIS-NIR absorption spectra shows the Surface Plasmon Resonance(SPR) at707 nmfor as grown sample (room temperature) and a huge shifted SPR at 542 nm for the sample annealed at 4000C. FESEM confirms the increase in the particle size and EDX confirms the presence of Ag. From the IV-CV measurements, it is clear that these samples are having a wide charge storage window of about 2volts in as deposited sample which decreases with increase in the annealing temperature.
dc.identifier.citation AIP Conference Proceedings. v.2265
dc.identifier.issn 0094243X
dc.identifier.uri 10.1063/5.0016821
dc.identifier.uri http://aip.scitation.org/doi/abs/10.1063/5.0016821
dc.identifier.uri https://dspace.uohyd.ac.in/handle/1/9823
dc.title Metal nanoparticles in dielectric media: Physical vapor deposited HfO < inf > 2 < /inf > & amp; Ag multilayers for MOS device and SPR applications
dc.type Conference Proceeding. Conference Paper
dspace.entity.type
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