Gamma irradiation-induced effects on the electrical properties of HfO < inf > 2 < /inf > -based MOS devices
Gamma irradiation-induced effects on the electrical properties of HfO < inf > 2 < /inf > -based MOS devices
No Thumbnail Available
Date
2016-02-01
Authors
Manikanthababu, N.
Arun, N.
Dhanunjaya, M.
Nageswara Rao, S. V.S.
Pathak, A. P.
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
Hafnium Oxide (HfO2) thin films were synthesized by e-beam evaporation and Radio frequency magnetron sputtering techniques. Au/HfO2/Si-structured Metal Oxide Semiconductor capacitors have been fabricated to study the effects of gamma irradiation on the electrical properties, leakage current versus voltage (I–V) and capacitance versus voltage (C–V) characteristics, as a function of irradiation dose. Systematic increase in leakage current as well as accumulation capacitance has been observed with increase in the irradiation dose. The influence of gamma irradiation and pre-existing defects on the evolution of oxide and interface traps have been studied in detail.
Description
Keywords
C–V measurements,
high-k dielectrics,
interface trap densities and gamma irradiation,
I–V,
MOS devices,
oxide traps
Citation
Radiation Effects and Defects in Solids. v.171(1-2)