Gamma irradiation-induced effects on the electrical properties of HfO < inf > 2 < /inf > -based MOS devices

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dc.contributor.author Manikanthababu, N.
dc.contributor.author Arun, N.
dc.contributor.author Dhanunjaya, M.
dc.contributor.author Nageswara Rao, S. V.S.
dc.contributor.author Pathak, A. P.
dc.date.accessioned 2022-03-27T06:42:34Z
dc.date.available 2022-03-27T06:42:34Z
dc.date.issued 2016-02-01
dc.description.abstract Hafnium Oxide (HfO2) thin films were synthesized by e-beam evaporation and Radio frequency magnetron sputtering techniques. Au/HfO2/Si-structured Metal Oxide Semiconductor capacitors have been fabricated to study the effects of gamma irradiation on the electrical properties, leakage current versus voltage (I–V) and capacitance versus voltage (C–V) characteristics, as a function of irradiation dose. Systematic increase in leakage current as well as accumulation capacitance has been observed with increase in the irradiation dose. The influence of gamma irradiation and pre-existing defects on the evolution of oxide and interface traps have been studied in detail.
dc.identifier.citation Radiation Effects and Defects in Solids. v.171(1-2)
dc.identifier.issn 10420150
dc.identifier.uri 10.1080/10420150.2015.1135152
dc.identifier.uri http://www.tandfonline.com/doi/full/10.1080/10420150.2015.1135152
dc.identifier.uri https://dspace.uohyd.ac.in/handle/1/9845
dc.subject C–V measurements
dc.subject high-k dielectrics
dc.subject interface trap densities and gamma irradiation
dc.subject I–V
dc.subject MOS devices
dc.subject oxide traps
dc.title Gamma irradiation-induced effects on the electrical properties of HfO < inf > 2 < /inf > -based MOS devices
dc.type Journal. Article
dspace.entity.type
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