Ion beam studies of semiconductor nanoparticles for the integration of optoelectronic devices

Abstract

Radiation hardened microelectronics compatible and tunable light emitting devices are essential for the integration of electronic and optoelectronic devices. Porous or nano-crystalline silicon seems to be a promising material for accomplishing this task. Ion beam patterned structures of light emitting silicon nanoparticles can be used for achieving multiple wavelength emission. Here we present a study on the influence of oxidation, pre and post anodization irradiation on emission parameters and on the stability of passivating bonds of porous silicon. © 2011 American Institute of Physics.