Ion beam studies of semiconductor nanoparticles for the integration of optoelectronic devices

dc.contributor.author	Nageswara Rao, S. V.S.
dc.contributor.author	Vendamani, V. S.
dc.contributor.author	Satrasala, Sandeep K.
dc.contributor.author	Padhe, Santanu K.
dc.contributor.author	Srinadha, Rao K.
dc.contributor.author	Dhamodaran, S.
dc.contributor.author	Pathak, Anand P.
dc.date.accessioned	2022-03-27T06:42:45Z
dc.date.available	2022-03-27T06:42:45Z
dc.date.issued	2011-07-14
dc.description.abstract	Radiation hardened microelectronics compatible and tunable light emitting devices are essential for the integration of electronic and optoelectronic devices. Porous or nano-crystalline silicon seems to be a promising material for accomplishing this task. Ion beam patterned structures of light emitting silicon nanoparticles can be used for achieving multiple wavelength emission. Here we present a study on the influence of oxidation, pre and post anodization irradiation on emission parameters and on the stability of passivating bonds of porous silicon. © 2011 American Institute of Physics.
dc.identifier.citation	AIP Conference Proceedings. v.1336
dc.identifier.issn	0094243X
dc.identifier.uri	10.1063/1.3586114
dc.identifier.uri	http://aip.scitation.org/doi/abs/10.1063/1.3586114
dc.identifier.uri	https://dspace.uohyd.ac.in/handle/1/9863
dc.subject	Nano-crystalline silicon
dc.subject	Porous silicon
dc.subject	Radadiation damage and irradiation
dc.title	Ion beam studies of semiconductor nanoparticles for the integration of optoelectronic devices
dc.type	Conference Proceeding. Conference Paper
dspace.entity.type

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