Optical properties of excimer laser nanostructured silicon wafer

Abstract

KrF excimer laser nanostructuring of [311] single crystal silicon surface is reported for laser fluence above ablation threshold for silicon. Laser irradiation of silicon surface gives rise to growth of nano-sized grains. Cooling time between the shots is an important factor in determining the nanostructures, apart from the number of shots and the laser fluence. Such nanostructured silicon surfaces become highly absorbing and photoluminescent and these peaks can be tuned by laser dressing parameters. © 2009 American Institute of Physics.