Bi2 (Zn < inf > 2/3-x/3 < /inf > Nb < inf > 4/3-2x/3 < /inf > Ti < inf > x < /inf > )O < inf > 7 < /inf > ceramics - A high permittivity microwave dielectrics for electronics application

Abstract

High-K materials are needed for many microwave applications. In this paper microwave properties of Bi2Zn2/3-x/3Nb 4/3-2x/3TixO7 ceramics with x of 0, 0.2 and 0.4 are presented. Ceramics samples were prepared by solid state reaction from respective high purity oxide powders. Dielectric microwave properties of synthesised materials were measured at 3GHz in a wide range of temperatures using Dielectric Post (DP) resonator technique. The high dielectric permittivity together with low sintering temperature make M-BNZ an attractive candidate for Low Temperature Co-fired Ceramics for charge storage applications in various electronics circuits and microwave systems. ©2008 IEEE.