Thermal Stability Analysis of Graded-Channel Dual-Material Double-Gate (GCDMDG) MOSFET for Analog Application

Abstract

In this paper, thermal stability analysis of graded-channel dual-material double-gate (GCDMDG) MOSFET has been discussed in terms of analog and RF performances. Analog and RF characteristics have been analyzed at different temperature (200–500 K) to find thermal stability point. The device performance has been examined with major performance parameters. This analysis has been done on the 2D TCAD simulator of Silvaco ATLAS. It is seen that the stability point for all the parameters lies in the range of gate voltage 0.5–0.8 V. Further, a common source amplifier with diode connected load has been designed using GCDMDG MOSFET. A higher amplification gain has been achieved with the device, when used as common source amplifier. This paper provides a unique attempt to explore the thermal stability and analog applications of double-gate MOSFETs.