Ion beam studies in strained layer superlattices
Ion beam studies in strained layer superlattices
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Date
2002-01-01
Authors
Pathak, A. P.
Nageswara Rao, S. V.S.
Siddiqui, A. M.
Lakshmi, G. B.V.S.
Srivastava, S. K.
Ghosh, S.
Bhattacharya, D.
Avasthi, D. K.
Goswami, D. K.
Satyam, P.
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Abstract
The potential device application of semiconductor heterostructures and strained layer superlattices has been highlighted. Metal organic chemical vapour deposition grown In0.53Ga0.47As/InP lattice-matched structure has been irradiated by 130 MeV Ag13+ and studied by RBS/Channelling using 3.5 MeV He2+ ions. Ion irradiation seems to have induced a finite tensile strain in the InGaAs layer, indicating thereby that ion beam mixing occurs at this energy. Other complementary techniques like high resolution XRD and STM are needed to conclude the structural modifications in the sample. © 2002 Elsevier Science B.V. All rights reserved.
Description
Keywords
Ion beam mixing,
RBS/channeling,
SLS
Citation
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. v.193(1-4)